ALD ONE®

Our advanced atomic layer processing platform delivers excellent precision and process flexibility. This platform is built to push the boundaries of thin film engineering.

Whether used as a standalone platform or seamlessly integrated into a cluster system, our ALD solution is engineered for scalability, reliability, and real-time process optimization.

Features & Capabilities

Standalone & Cluster Integration

Expandable for high-throughput pilot or commercial-scale manufacturing.

Film Thickness Uniformity

±1% (1σ) for thermal ALD of Al₂O₃ on a

ø200 mm wafer.

Advanced In-Situ Monitoring

Real-time film growth tracking with ellipsometry & quartz crystal monitoring.

Substrate Compatibility

Up to Ø300 mm wafers or 210 mm × 210 mm (M12/G12) solar wafers.

Glovebox Integration

Controlled environment for sensitive materials.

Hollow Cathode Design

Plasma Source

Clean, oxygen-free nitride processes.

Process Control & Stability:

Differential pressure management between reactor and outer chamber for contamination-free processing.

Partnering with Angstrom Engineering®

Partnering with us means gaining access to a team of top-tier engineers and scientists, ensuring expert collaboration, rapid problem-solving, and tailored system optimization. Our commitment to innovation empowers researchers to achieve breakthrough advancements in thin film technology.

ALD In The Field

"Working with Angstrom Engineering® has been a great experience. The ALD reactor is easy to use, and the software is intuitive and working excellently. I’ve found it nice that this is a company where you deal with people throughout the organization, including the very top. Throughout our collaboration, business never got in the way of science and facts."

David Emslie,