scia Eva 200

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Ion Beam Etching

Ion Beam Trimming

Ion Beam Sputtering

scia Cluster 200

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Glancing Angle Deposition for Precise Nanostructures

With the scia Eva 200 ultra-pure coatings can be deposited on up to 200 mm wafers by electron beam (e-beam) evaporation. The system enables up to 12 target materials in crucible-pockets and can be configured with single wafer load lock or with fully automated cassette handling. In addition, the system has a very small footprint and an ion beam source can be integrated for pre-cleaning.

Features & Benefits

Substrate holder precisely tiltable and rotatable, defined angle of incidence adjustable

High deposition rates for evaporation of high temperature materials and refractory metals

Up to 12 evaporation materials in water-cooled multi pocket rotatable crucible

Optional ion beam source for pre-cleaning

Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication

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Single chamber with single substrate load-lock

Applications

Principle of GLAD (left) and SEM picture of deposited silicon nanostructures (right) with courtesy of University of Nebraska

Glancing angle deposition (GLAD) of nano-structured thin film layers for production of photo-electrodes for efficient fuel generation

Infrared-emitters for detection and spectroscopy for gas analyzer and smart applications

Metallization of substrates

Dielectric coatings

Optical coatings

Principle

Electron Beam (E-beam) Evaporation Current through tungsten filament causes electron emission, which accelerates to an e-beam by high voltage. A magnetic field deflects the e-beam so that it is focused into the crucible. This leads to evaporation of target material and deposition on the substrate.

Detailled Information

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