scia Mill 150
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Full Surface Ion Beam Etching on 150 mm Substrates
The scia Mill 150 is designed for structuring of complex multilayers of various materials. With its fully reactive gas compatibility the system also enables reactive etching processes with enhanced selectivity and rate. Due to its space saving design the scia Mill 150 is ideal for small scale production and R&D applications.
Features & Benefits
Etching angle adjustment with tiltable and rotatable substrate holder
Excellent uniformity without shaper
Enhanced selectivity and rate with reactive gases
Process control with exact SIMS based or optical end point detection
Carrier concept for adaptation to variable substrate sizes
Processing of wafers with photoresist masks due to good wafer cooling
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Single chamber with single substrate load lock
Single chamber with load lock, SIMS and heating jacket for reactive processes
Installation through clean room wall
Applications
SEM pictures of etching edge with courtesy of DIAS Infrared GmbH.
Etching of 15 µm lithium tantalate with photoresist and 15° angle of incidence for a pyroelectric sensor.
Left: Standard photoresist mask with sharp edges.
Right: Optimized photoresist with smooth edges improves electrical bonding of the sensor.
Structuring of magnetic memory (MRAM) and sensors (GMR, TMR, etc.)
Structuring of metals (Au, Ru, Ta, …), piezoelectric, and dielectric materials (PZT, KNN, AlScN, InP, Cu, Pt, Au, ...), e.g., for MEMS production
Delayering of multilayer structures for failure analysis
| 型号 | scia Mill 150 |
|---|---|
| Product category | Ion Beam Etching |
| Substrate size (up to) |
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| 150 mm dia. |
| Substrate holder | Water-cooled, helium backside cooling contact, substrate rotation 1 to 20 rpm, tiltable in-situ from 0° to 165° in 0.1° steps |
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| Ion beam source | 190 mm circular microwave ECR source (MW218-e) |
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| Neutralizer | Triple plasma bridge neutralizer (N-3DC) RF plasma bridge neutralizer (RF-PBN) |
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| Base pressure | < 5 x 10 -7 mbar |
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| System dimension (W x D x H) | 1.90 m x 1.80 m x 1.75 m (without electrical rack) |
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| Configurations | Single chamber, optional single substrate load lock, optional OES or SIMS based end point detection |
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| Software interfaces | SECS II / GEM, OPC |
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| Typical removal rate | SiO 2 : 30 nm/min |
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| Uniformity variation | ≤ 3 % (σ/mean) |
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