EpiStride
Introducing the EpiStride System for Silicon Carbide: A New Stride in SiC Epitaxy
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:Veeco’s latest technology for the compound semiconductor market enables high-performance chemical vapor deposition of Silicon Carbide for both 6 and 8-inch wafer production. The platform enables a return to production in under 5 hours after routine cleaning maintenance. The EpiStride system’s high uptimes, short cycle times and overall stable performance lead to the lowest cost of ownership per wafer compared to competitive systems.
:Features and Benefits
:Single-wafer, cross-flow, hot-wall chemical vapor deposition (CVD) system for Silicon Carbide epitaxy
:Capable of processing wafers of any size up to 200 mm
:Available in single- or dual-chamber configurations
:Ensuring the Highest Epitaxial Quality
:The EpiStride system can grow epi layers of standard 10-15 um thickness with thickness uniformities well below 1% and doping uniformities below 2%
:This performance is achieved repeatably throughout a campaign cycle in-between routine cleaning and maintenance operations
:Providing Unmatched Ease-of-Use
:Only system to complete routine cleaning maintenance in < 5 hours (green-to-green time), out of which human-touch-time is < 1 hour
:Routine cleaning maintenance is performed in an inert environment through a glovebox with easy access to the reactor
:The glovebox allows for a quick exchange of parts without complex and time-consuming disconnection of hardware components
:Upon maintenance completion, the EpiStride system quickly achieves baseline performance with no need for further hardware or software tuning
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