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ø300 mm RIE Plasma Etching System RIE-300NR

RIE Plasma

反应离子刻蚀。Up to �300 mm (�12")。The RIE-300NR is an ideal reactive ion etching system for processing of ø300 mm wafer and multiple wafers (ø3" x 12, ø4" x 8, etc.) with excelle

品牌: Samco价格: 面议服务区域: 全国

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Products RIE Plasma Etching System RIE-10NR

反应离子刻蚀

ø300 mm RIE Plasma Etching System RIE-300NR

ø300 mm RIE Plasma Etching System RIE-300NRUp to �300 mm (�12")

The RIE-300NR is an ideal reactive ion etching system for processing of ø300 mm wafer and multiple wafers (ø3" x 12, ø4" x 8, etc.) with excellent uniformity. This system is designed to minimize factory space requirements, enhance throughput, maximize uptime, and reduce the cost of ownership through reliable hardware and ease of service.

主要特点和优点

Processing up to ø350 mm (ø3" x 12, ø4" x 8, ø12" x 1)

User-friendly touch screen interface

Fully automatic “one-button” operation with full manual override

An optimized shower head to deliver process gas uniformity

A close coupled gas delivery box which reduces the residence time

A symmetrical evacuation design coupled to a TMP creates an efficient flow

Automatic pressure control that allows for precise control of process pressure independent of gas flow

Dry pump and system layout allow for ease of maintenance

Removal of interlayer films for failure analysis of ø300 mm

Etching of Si, SiO2, SiN and Poly-Si

Etching of resins and desmear

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设备 ICP-RIE等离子体蚀刻设备 RIE-230iP

ICP-RIE等离子体蚀刻设备 RIE-230iP

RIE-230iP

设备 ICP-RIE等离子体蚀刻设备 RIE-230iPC

ICP-RIE等离子体蚀刻设备 RIE-230iPC

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RIE-230iPC