RIE Plasma Etching System RIE-200NL

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RIE Plasma Etching System RIE-200NL

RIE Plasma Etching System RIE-200NLExcellent repeatability & stability

The RIE-200NL is a loadlock type reactive ion etching system that improves process repeatability and allows for corrosive gas chemistry. A fully optimized process chamber design provides excellent uniformity on ø8" wafers or ø220 mm carrier trays of smaller wafers. The system enables accurate sidewall profile control and high etch selectivity between materials. With its sleek, compact design, the RIE-200NL requires minimal cleanroom space.

主要特点和优点

Processing up to ø220 mm (ø3” x 5, ø4” x 3, ø8” x 1)

A symmetrical evacuation design improves etching uniformity

The process chamber is isolated from the environment by a loadlock chamber, which improves process repeatability and allows for corrosive gas chemistry

A computerized touch screen provides a user-friendly interface for parameter control and storage

Automatic pressure control that allows for precise control of process pressure independent of gas flow

Dry pump and system layout allow for ease of maintenance

With its sleek, compact design, the RIE-200NL requires minimal cleanroom space

Chlorine based etching of compound semiconductor such as GaN, GaAs, InP, etc.

Etching of various materials such as Si, SiO2, SiN, Poly-Si, Al, Mo, Pt, Polyimide, etc.

Selective layer etching in failure analysis